Effect of interface states on the performance of GaAs p¿-i far-infrared detectors
نویسندگان
چکیده
Interface states have been shown to have an appreciable effect on the performance of p-GaAs multilayer ~p-i-p-i. . . ! homojunction interfacial work function internal photoemission ~HIWIP! far-infrared detectors. In this article, a comparison of detector performance was made of p-GaAs HIWIP detectors with different interface state densities, with the emphasis on the detector’s dark current, noise, and capacitance characteristics. © 2000 American Vacuum Society. @S0734-2101~00!03502-8#
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